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FFP08S60SN
April 2008
FFP08S60SN
Features
* High Speed Switching, trr < 25ns @ IF = 8A * High Reverse Voltage and High Reliability * RoHS compliant
STEALTHTM II Rectifier
tm
8A, 600V STEALTHTM II Rectifier
The FFP08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
Applications
* General Purpose * Switching Mode Power Supply * Boost Diode in continuous mode power factor corrections * Power switching circuits
TO-220-2L 1. Cathode 2. Anode
1. Cathode
2. Anode
Absolute Maximum Ratings TC = 25oC unless otherwise noted
Symbol VRRM VRWM VR IF(AV) IFSM TJ, TSTG Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating and Storage Temperature Range @ TC = 89oC Ratings 600 600 600 8 60 -65 to +150 Units V V V A A
o
C
Thermal Characteristics
Symbol RJC Parameter Maximum Thermal Resistance, Junction to Case Ratings 3.6 Units
o
C/W
Package Marking and Ordering Information
Device Marking
F08S60SN
Device
FFP08S60SNTU
Package
TO220-2L
Reel Size
-
Tape Width
-
Quantity
50
(c)2008 Fairchild Semiconductor Corporation FFP08S60SN Rev. A
1
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FFP08S60SN
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol VFM1 IRM1 trr trr Irr S factor Qrr trr Irr S factor Qrr WAVL IF = 8A IF = 8A VR = 600V VR = 600V IF = 1A, di/dt = 100A/s, VR = 30V IF = 8A, di/dt = 200A/s, VR = 390V Parameter TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 25 C
o
Min. 10
Typ. 2.7 2.1 13 15 2.5 0.4 19 32 3.8 0.7 62 -
Max. 3.4 100 500 25 -
Units V A ns ns A nC ns A nC mJ
IF = 8A, di/dt = 200A/s, VR = 390V Avalanche Energy ( L = 40mH)
TC = 125oC
Notes: 1: Pulse: Test Pulse width = 300s, Duty Cycle = 2%
Test Circuit and Waveforms
FFP08S60SN Rev. A
2
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FFP08S60SN
Typical Performance Characteristics
Figure 1. Typical Forward Voltage Drop vs. Forward Current
20 10
Reverse Current , IR [A]
Forward Current, IF [A]
TC = 125 C TC = 75 C
o o
Figure 2. Typical Reverse Current vs. Reverse Voltage
40 10
TC = 125 C
o
1
TC = 75 C
o
1
TC = 25 C
o
0.1
0.01
TC = 25 C
o
0.1 0 1 2 3 4 Forward Voltage, VF [V] 5
0.001
10
100
200 300 400 Reverse Voltage, VR [V]
500
600
Figure 3.Typical Junction Capacitance
50
Figure 4. Typical Reverse Recovery Time vs. di/dt
40
Reverse Recovery Time, trr [ns]
IF = 8A
Typical Capacitance at 0V = 43 pF
40 Capacitances , Cj [pF]
30
TC = 125 C
o
30
20
TC = 75 C
o
20
TC = 25 C
o
10
0 0.1
1 10 Reverse Voltage, VR [V]
100
10 100
200
300 400 di/dt [A/s]
500
600
Figure 5. Typical Reverse Recovery Current vs. di/dt
10
Reverse Recovery Current, Irr [A]
Figure 6. Forward Current Derating Curve
15
Average Forward Current, IF(AV) [A]
8
10
6
TC = 125 C
o
4
TC = 25 C
o
TC = 75 C
o
5
2
0 100
IF = 8A
200
300 400 di/dt [A/s]
500
600
0 25
50
75 100 125 o Case temperature, TC [ C]
150
FFP08S60SN Rev. A
3
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FFP08S60SN
Mechanical Dimensions
TO220 2L
Dimensions in Millimeters
FFP08S60SN Rev. A
4
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FFP08S60SN
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EZSWITCHTM *
TM
(R)
Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) *
FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R)
(R)
tm
PDP-SPMTM Power220(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
SupreMOSTM SyncFETTM (R) The Power Franchise(R)
tm
TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM
* EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I33
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
FFP08S60SN Rev. A
5
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